IRG4PF50W PBF IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:900V; Current, Ic Continuous a Max:51A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Current, Icm Pulsed:204A; Device Marking:IRG4PF50WPBF; Pins, No. of:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:220ns; Time, Fall Max:220ns; Time, Rise:26ns; Transistors, No. of:1; Voltage, Vceo:900V IGBT транзистор IRG4PF50WPBF. Описание в формате PDFIGBT транзистор IRG4PF50WPBF. Описание в формате PDF
Деталь близка по своим параметрам и/или аналогична IRG4PF50WPBF

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УЛ248704:596